US Patent Issued to Micron Technology on Nov. 3 for "Memory array structures and methods of their fabrication" (American, Italian Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,833, issued on Nov. 3, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory array structures and methods of their fabrication" was invented by Paolo Tessariol (Arcore, Italy), Richard J. Hill (Boise, Idaho), Aaron S. Yip (Los Gatos, Calif.) and Kunal Parekh (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memory array structures might include a data line, a common source, and a plurality of sub-blocks of memory cells selectively connected to the data line and to the common source. Sub-blocks of memory cells might include memory cells formed to be around channel material structures, and might include isolation of source-side sele...