US Patent Issued to Micron Technology on May 26 for "Method used in forming memory circuitry comprising stairs in a stair-step region using first and second layers of imageable resist" (American, Italian Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,640,202, issued on May 26, was assigned to Micron Technology Inc. (Boise, Idaho).

"Method used in forming memory circuitry comprising stairs in a stair-step region using first and second layers of imageable resist" was invented by Lifang Xu (Boise, Idaho), Anna Maria Conti (Milan), Harsh Narendrakumar Jain (Boise, Idaho) and H. Montgomery Manning (Eagle, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method used in forming memory circuitry comprises forming a stack comprising vertically-alternating first tiers and second tiers. The stack extends from a memory-array region into a stair-step region. The first tiers are conductive and the second tie...