US Patent Issued to Micron Technology on May 26 for "Dielectric engineered tunnel region in memory cells" (Idaho Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,835, issued on May 26, was assigned to Micron Technology Inc. (Boise, Idaho).

"Dielectric engineered tunnel region in memory cells" was invented by Jae Young Ahn (Boise, Idaho), Terry Hyunsik Kim (Boise, Idaho) and Manzar Siddik (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A variety of applications can include memory devices having memory cells, where each memory cell can have an engineered tunnel region between a channel structure of the memory cell and a charge storage region of the memory cell. The engineered tunnel region can be directed to improved read, program, and retention operations of the memory region. In various embodimen...