US Patent Issued to Micron Technology on May 12 for "Methods used in forming a memory array comprising strings of memory cells including selective depositing of silicon" (Idaho Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,342, issued on May 12, was assigned to Micron Technology Inc. (Boise, Idaho).

"Methods used in forming a memory array comprising strings of memory cells including selective depositing of silicon" was invented by John D. Hopkins (Meridian, Idaho), Nancy M. Lomeli (Boise, Idaho) and Jordan D. Greenlee (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method used in forming a memory array comprising strings of memory cells comprises forming a conductor tier comprising conductor material on a substrate. A vertical stack comprising alternating first tiers and second tiers is formed above the conductor tier. Channel-material strings extend thr...