US Patent Issued to Micron Technology on March 31 for "Concurrently writing less-densely-programmed and more-densely-programmed memory without additional hardware" (California Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,591,366, issued on March 31, was assigned to Micron Technology Inc. (Boise, Idaho).

"Concurrently writing less-densely-programmed and more-densely-programmed memory without additional hardware" was invented by Haibo Li (Cupertino, Calif.) and Xiangyu Tang (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device of a first array of memory cells configured as quad-level cell (QLC) memory or penta-level cell (PLC) memory and including one or more first planes. A second array of memory cells configured as second memory that is less-densely programmed than the first array, the second array including one or more second planes. Control...