US Patent Issued to Micron Technology on March 31 for "Apparatuses and memory devices including air gaps between conductive lines" (Idaho Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,679, issued on March 31, was assigned to Micron Technology Inc. (Boise, Idaho).

"Apparatuses and memory devices including air gaps between conductive lines" was invented by Sidhartha Gupta (Boise, Idaho), David Ross Economy (Boise, Idaho), Richard J. Hill (Boise, Idaho), Kyle A. Ritter (Boise, Idaho) and Naveen Kaushik (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming an apparatus includes forming pillar structures extending vertically through a first isolation material, forming conductive lines operatively coupled to the pillar structures, forming dielectric structures overlying the conductive lines, and forming air ...