ALEXANDRIA, Va., March 3 -- United States Patent no. 12,567,452, issued on March 3, was assigned to Micron Technology Inc. (Boise, Idaho).
"Word line charge integration" was invented by Ferdinando Bedeschi (Biassono, Italy) and Umberto Di Vincenzo (Capriate San Gervasio, Italy).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for word line charge integration are described. In some examples, a memory device may include a plurality of memory cells that are coupled with a word line and respective digit lines. During a read operation, the word line may be activated (e.g., driven to a voltage) and a subset of the respective digit lines may be activated (e.g., driven to a voltage) to beg...