US Patent Issued to Micron Technology on March 3 for "Storing non-volatile memory initialization failures" (Chinese Inventor)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,566,555, issued on March 3, was assigned to Micron Technology Inc. (Boise, Idaho).

"Storing non-volatile memory initialization failures" was invented by Qi Dong (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure includes apparatuses, methods, and systems for storing non-volatile memory initialization failures. In an example, a method can include initializing a volatile memory die, initializing a first non-volatile memory die in response to initializing the volatile memory die, copying executable instructions from the first non-volatile memory die to the volatile memory die in response to initializing the first non-volatile m...