US Patent Issued to Micron Technology on March 3 for "Memory apparatus and methods including merged process for memory cell pillar and source structure" (Idaho Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,621, issued on March 3, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory apparatus and methods including merged process for memory cell pillar and source structure" was invented by Byeung Chul Kim (Boise, Idaho), Joshua Wolanyk (Boise, Idaho), Richard J. Hill (Boise, Idaho) and Damir Fazil (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments include apparatuses and methods of forming the apparatuses. One of the methods includes forming levels of materials one over another; forming a first opening and a second opening in the levels of materials; forming at least one dielectric material in the first and second op...