US Patent Issued to Micron Technology on March 17 for "Read operations with offset for slow charge loss" (California Inventor)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,580,032, issued on March 17, was assigned to Micron Technology Inc. (Boise, Idaho).

"Read operations with offset for slow charge loss" was invented by Kyungjin Kim (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Apparatuses and methods for performing read operations using an offset based upon slow charge loss characteristics are provided. One example apparatus can include a controller configured to apply a read voltage to a word line in the array of memory cells during a read operation on the word line, wherein the read voltage includes an offset associated with a slow charge loss characteristic of the word line."

The patent was filed...