US Patent Issued to Micron Technology on June 9 for "Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems" (Idaho Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,653,018, issued on June 9, was assigned to Micron Technology Inc. (Boise, Idaho).

"Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems" was invented by Collin Howder (Boise, Idaho) and Yiping Wang (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A microelectronic device comprises a stack structure, a staircase structure, a first liner material, a liner structure, conductive contact structures, and barrier structures. The stack structure comprises vertically alternating conductive structures and insulative structures arranged in tiers. Each of the tiers individually comprises ...