US Patent Issued to Micron Technology on June 2 for "Memory cell capacitor structures for three-dimensional memory arrays" (California, Idaho Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,648,126, issued on June 2, was assigned to Micron Technology Inc. (Bosie, Idaho).

"Memory cell capacitor structures for three-dimensional memory arrays" was invented by Sheyang Ning (San Jose, Calif.), Song Guo (Boise, Idaho) and Yuan He (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for memory cell capacitor structures for three-dimensional memory arrays are described. A memory device may include a memory array including multiple levels of memory cells that are each separated from another level by a respective dielectric layer. A memory cell at a first level of the memory array may include a channel portion an...