US Patent Issued to Micron Technology on June 16 for "Patterning of 3D NAND pillars and flying buttress supports with three stripe technique" (Idaho Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,626, issued on June 16, was assigned to Micron Technology Inc. (Boise, Idaho).

"Patterning of 3D NAND pillars and flying buttress supports with three stripe technique" was invented by Anton P. Eppich (Boise, Idaho) and Shruti Jain (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional (3D) memory device including a stack of alternating supporting lattice layers and dielectric layers on a substrate, a plurality of memory pillars vertically penetrating the stack, each of the plurality of memory pillars including a plurality of vertically connected replacement gate (RG) memory cells that correspond to the supporting lattice la...