US Patent Issued to Micron Technology on June 16 for "Intervening polysilicon materials that are thicker at distal edges than at pillars defining memory cells and related apparatuses, systems, and methods" (Idaho Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,190, issued on June 16, was assigned to Micron Technology Inc. (Boise, Idaho).

"Intervening polysilicon materials that are thicker at distal edges than at pillars defining memory cells and related apparatuses, systems, and methods" was invented by Alyssa N. Scarbrough (Boise, Idaho), John D. Hopkins (Meridian, Idaho) and Jordan D. Greenlee (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Source terminals of memory devices and related apparatuses, computing systems, and methods are disclosed. An apparatus includes a first polysilicon material, a second polysilicon material offset from the first polysilicon material, an intervening polysil...