US Patent Issued to Micron Technology on July 28 for "Power regeneration in a memory device" (Idaho Inventor)

ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,685, issued on July 28, was assigned to Micron Technology Inc. (Boise, Idaho).

"Power regeneration in a memory device" was invented by Anthony D Veches (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device comprises multiple memory dice arranged vertically in a stack of memory dice and at least one thermoelectric die contacting the bulk silicon layer of at least one of the memory dice of the multiple memory dice. Each memory die of the multiple memory dice includes an active circuitry layer that includes memory cells of a memory array and a bulk silicon layer. The thermoelectric die is configured to one or both of reduce heat ...