US Patent Issued to Micron Technology on July 21 for "Memory device including source structure having conductive islands of different widths" (Idaho Inventor)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,449, issued on July 21, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory device including source structure having conductive islands of different widths" was invented by Shuangqiang Luo (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments include apparatuses. One of the apparatuses includes a conductive structure including a first conductive region under first memory cells, a second conductive region under second memory cells, and a third conductive region between the first and second conductive regions; conductive islands adjacent each other and formed in the third conductive region and separated from the thir...