US Patent Issued to Micron Technology on July 21 for "Cycling of memory blocks" (Singaporean, American Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,687,968, issued on July 21, was assigned to Micron Technology Inc. (Boise, Idaho).

"Cycling of memory blocks" was invented by Chong Giap Chiew (Singapore), Sean Brasfield (Boise, Idaho) and Tawalin Opastrakoon (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for managing wear leveling in a non-volatile memory device, the method initiating, by a memory controller, a block cycling operation on a memory block within the non-volatile memory device. The method includes selecting, by the memory controller, a block cycling mode from a set of block cycling modes. The method also includes outputting, by the memory controller, a block cycling...