US Patent Issued to Micron Technology on July 14 for "Recovery mode for memory device" (American, German Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,681,805, issued on July 14, was assigned to Micron Technology Inc. (Boise, Idaho).

"Recovery mode for memory device" was invented by Nicholas T. Heath (Pittsboro, N.C.) and Gaurav Sinha (UnterschleiBheim, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "Implementations described herein relate to implementing a recovery mode for a memory device. In some implementations, the memory device may include memory and one or more components. The one or more components may be configured to receive, from a host system, an indication that the memory device is associated with a failure. The one or more components may be configured to receive, from the host sys...