US Patent Issued to Micron Technology on Feb. 24 for "Trench and pier architectures that provide mechanical support during formation of three-dimensional memory arrays" (American, Italian Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,746, issued on Feb. 24, was assigned to Micron Technology Inc. (Boise, Idaho).

"Trench and pier architectures that provide mechanical support during formation of three-dimensional memory arrays" was invented by Fabio Pellizzer (Boise, Idaho), Russell L Meyer (Boise, Idaho), Stephen W. Russell (Boise, Idaho) and Lorenzo Fratin (Buccinasco, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and devices for trench and pier architectures for three-dimensional memory arrays are described. A semiconductor device (e.g., a memory die) may include pier structures formed in contact with features formed from alternating layers of materials ...