US Patent Issued to Micron Technology on Feb. 17 for "Fabrication method of a lateral 3D memory device" (Idaho Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,266, issued on Feb. 17, was assigned to Micron Technology Inc. (Boise, Idaho).

"Fabrication method of a lateral 3D memory device" was invented by Yoshitaka Nakamura (Boise, Idaho), Yuanzhi Ma (Boise, Idaho), Scott E. Sills (Boise, Idaho), Si-Woo Lee (Boise, Idaho) and David K. Hwang (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and devices for a lateral three-dimensional memory device, are described herein. One method includes forming a thin film transistor including a first thermal process having a first range of temperatures, forming a capacitor bottom electrode of a capacitor structure including a second thermal process hav...