US Patent Issued to Micron Technology on Aug. 4 for "Memory device with improved driver operation and methods to operate the memory device" (Italian Inventor)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,700,452, issued on Aug. 4, was assigned to Micron Technology Inc..

"Memory device with improved driver operation and methods to operate the memory device" was invented by Ferdinando Bedeschi (Biassono, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a memory device comprising memory cells at cross points of access lines of a memory array, and a two-transistor driver comprising a P-type transistor and a N-type transistor connected to the P-type transistor, the two-transistor driver being configured to drive a first one of the access lines to a read/program voltage through the two-transistor driver, during a PULSE phas...