US Patent Issued to Micron Technology on Aug. 25 for "Memory device access lines" (Idaho, New Mexico Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,731, issued on Aug. 25, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory device access lines" was invented by Daniel Billingsley (Meridian, Idaho), Jaydip Guha (Boise, Idaho), Marko Milojevic (Boise, Idaho), Sau Ha Cheung (Boise, Idaho) and Luca Fumagalli (Rio Rancho, N.M.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, apparatuses, and systems related to conductive structures are described. An example conductive structure includes a first conductive material including a conductive metal nitride, where the first conductive material has a thickness of at least 0.5 nanometers, and a second conductive material including a conducti...