US Patent Issued to Micron Technology on Aug. 25 for "Dynamic read disturb management algorithm for flash-based memory" (Chinese, Italian Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,717,712, issued on Aug. 25, was assigned to Micron Technology Inc. (Boise, Idaho).

"Dynamic read disturb management algorithm for flash-based memory" was invented by Hua Tan (Shanghai), Zhen Shu (Shanghai) and Nicola Colella (Capodrise, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device comprises a memory array and a memory controller operatively coupled to the memory array. The memory controller includes a processor configured to initiate read operations to the memory array; compare the number of read operations to a predetermined threshold number of read operations; initiate scanning memory pages of a block of memory cells for errors...