US Patent Issued to Micron Technology on Aug. 25 for "Apparatus containing memory array structures having multiple sub-blocks, and operation of such apparatus" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,718,883, issued on Aug. 25, was assigned to Micron Technology Inc. (Boise, Idaho).

"Apparatus containing memory array structures having multiple sub-blocks, and operation of such apparatus" was invented by Yoshiaki Fukuzumi (Yokohama, Japan), Jun Fujiki (Tokyo), Shuji Tanaka (Kanagawa, Japan) and Masanobu Saito (Chiba City, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Apparatus might include an array of memory cells comprising a plurality of strings of series-connected memory cells, a data line, a first field-effect transistor between the data line and a first string of series-connected memory cells, and a second field-effect transistor between ...