US Patent Issued to Micron Technology on Aug. 11 for "Memory device having 2-transistor vertical memory cell and a common plate" (Idaho Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,628, issued on Aug. 11, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory device having 2-transistor vertical memory cell and a common plate" was invented by Kamal M. Karda (Boise, Idaho), Karthik Sarpatwari (Boise, Idaho), Haitao Liu (Boise, Idaho) and Durai Vishak Nirmal Ramaswamy (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a substrate, a conductive plate located over the substrate to couple a ground connection, a data line located between the substrate and the conductive plate, a memory cell, and a conductive ...