US Patent Issued to Micron Technology on Aug. 11 for "Memory circuitry and method used in forming memory circuitry" (Idaho Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,950, issued on Aug. 11, was assigned to Micron Technology Inc. (Boise, Idaho).

"Memory circuitry and method used in forming memory circuitry" was invented by Jivaan Kishore Jhothiraman (Meridian, Idaho) and Chandra Tiwari (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method used in forming memory circuitry comprises forming a stack comprising vertically-alternating first tiers and second tiers. The stack extends from a memory-array region into a stair-step region. The stack in the stair-step region comprises a cavity comprising a flight of stairs in a vertical cross-section along a first direction. The first tiers are conductive and...