ALEXANDRIA, Va., April 21 -- United States Patent no. RE50,874, issued on April 21, was assigned to Micron Technology Inc. (Boise, Idaho).
"Memory arrays" was invented by Martin C. Roberts (Boise, Idaho), Sanh D. Tang (Kuna, Idaho) and Fred D. Fishburn (Hiroshima, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory array comprises vertically-alternating tiers of insulative material and memory cells. The memory cells individually include a transistor comprising first and second source/drain regions having a channel region there-between and a gate operatively proximate the channel region. At least a portion of the channel region is horizontally-oriented for horizontal current flow in the portion betw...