US Patent Issued to Micron Technology on April 14 for "Charge domain compute-in-DRAM for binary neural network" (Japanese, American Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,602,175, issued on April 14, was assigned to Micron Technology Inc. (Boise, Idaho).

"Charge domain compute-in-DRAM for binary neural network" was invented by Wenlun Zhang (Chofu, Japan) and Yuan He (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and systems for computing in-dynamic random access memory (DRAM) computing include loading a first group of cells of the DRAM with input parameters and loading a second group of cells of the DRAM with inverted input parameters that are each complementary to corresponding input parameters. An offset group of cells of the DRAM is loaded with an indication of an offset voltage. An operation is...