US Patent Issued to Micron Optoelectronics on Sept. 15 for "Electrothermal film structure, electrothermal film heating device and method for manufacturing electrothermal film" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,739,947, issued on Sept. 15, was assigned to Micron Optoelectronics Co. Ltd. (Shenzhen, China).

"Electrothermal film structure, electrothermal film heating device and method for manufacturing electrothermal film" was invented by Wei Su (Shenzhen, China), Shourong Hu (Shenzhen, China), Guoliang Zhang (Shenzhen, China) and Yu Su (Shenzhen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electrothermal film structure includes a supporting layer, a meshed conductive circuit layer and a transparent optical layer. The meshed conductive circuit layer provided on the supporting layer includes several micron-level conductive circuits distributed in a me...