ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,569, issued on Feb. 17, was assigned to Microchip Technology Inc. (Chandler, Ariz.).
"Forming a partially silicided element" was invented by Yaojian Leng (Vancouver, Wash.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a partially silicided element is provided. A silicided structure including a silicide layer on a base structure is formed. A dielectric region is formed over the silicided structure. The dielectric region is etched to form a contact opening exposing a first area of the silicide layer and a tub opening exposing a second area of the silicide layer. A conformal metal is deposited to (a) fill the contact opening to def...