ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,704,427, issued on Aug. 11, was assigned to MEI Micro Inc. (Orlando, Fla.).
"MEMS pressure sensor" was invented by Robert Mark Boysel (Delaware, Ohio) and Louis Ross (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides a MEMS pressure sensor and a manufacturing method. The pressure is formed by a top cap wafer, a MEMS wafer and a bottom cap wafer. The MEMS wafer comprises a frame and a membrane, the frame defining a cavity. The membrane is suspended by the frame over the cavity. The bottom cap wafer closes the cavity. The top cap wafer has a recess defining with the membrane a capacitance gap. The top cap wafer comprises ...