US Patent Issued to MediaTek on Oct. 27 for "Semiconductor structure of bipolar junction transistor (BJT)" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,667, issued on Oct. 27, was assigned to MediaTek Inc. (Hsinchu City, Taiwan).

"Semiconductor structure of bipolar junction transistor (BJT)" was invented by Shih-Chuan Chiu (Hsinchu City, Taiwan), Chia-Hsin Hu (Hsinchu City, Taiwan) and Zheng Zeng (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures of bipolar junction transistor (BJT) are provided. A first active region of a collection region is formed over a first P-type well region. Second and third active regions of a base region are formed over an N-type well region. A fourth active region of an emitter region is formed over a second P-type well region. ...