ALEXANDRIA, Va., July 28 -- United States Patent no. 12,696,526, issued on July 28, was assigned to MediaTek Inc. (Hsinchu City, Taiwan).
"Bipolar junction transistor (BJT) structure" was invented by Shih-Chuan Chiu (Hsinchu City, Taiwan), Chia-Hsin Hu (Hsinchu City, Taiwan) and Zheng Zeng (Hsinchu City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Bipolar junction transistor (BJT) structures are provided. First and second well regions are formed over a dielectric layer. A plurality of first and second gate-all-around (GAA) field-effect transistors are formed over a first well region. A plurality of third GAA field-effect transistors are formed over the second well region. Source/drain features of t...