ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,707,726, issued on Aug. 11, was assigned to MediaTek Inc. (Hsinchu City, Taiwan).
"Electrostatic discharge (ESD) protection structure" was invented by Han-Sheng Huang (Hsinchu City, Taiwan) and Bo-Shih Huang (Hsinchu City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Electrostatic discharge (ESD) protection structures are provided. A first N-type well region is formed over a P-type semiconductor substrate. First P-type well region and second N-type well region are formed over the first N-type well region. A plurality of first device areas are formed over the first P-type well region. Each first device area includes a plurality of P-type fins ex...