ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,305, issued on Sept. 15, was assigned to MAX PLANCK GESELLSCHAFT ZUR FORDERUNG DER WISSENSCHAFTEN EV (Munich).

"Increased efficiency of current induced motion of chiral domain walls by interface engineering" was invented by Yicheng Guan (Halle, Germany), Tianping Ma (Halle, Germany), Robin Blaesing (Halle, Germany) and Stuart S.P. Parkin (Halle, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to a magnetic domain wall displacement type memory cell (racetrack memory device) that includes a 4d or 5d metal dusting layer (DL) at the ferromagnetic/heavy metal interface of the ferromagnetic (FM) structure or the synth...