US Patent Issued to Massachusetts Institute of Technology on July 21 for "Transistor structure and methods of forming the same" (American, Taiwanese Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,398, issued on July 21, was assigned to Massachusetts Institute of Technology (Cambridge, Mass.).

"Transistor structure and methods of forming the same" was invented by Tomas A. Palacios (Belmont, Mass.), Qingyun Xie (Cambridge, Mass.), John Prakash Niroula (Los Angeles), Pao-Chuan Shih (Taichung City, Taiwan) and Gillian Micale (Boston).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is an epitaxial design/structure and transistor platform for a III-N transistor/chip incorporating a backside conductive/metal layer. The backside metal may serve several functions in the transistor/chip, including serving as a back gate, a field plate, and an e...