ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,651, issued on April 14, was assigned to Massachusetts Institute of Technology (Cambridge, Mass.).

"Rapid fabrication of semiconductor thin films" was invented by Vladimir Bulovic (Lexington, Mass.) and Richard Swartwout (Cambridge, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor thin films and rapid methods of fabrication can include mixed cations created through recrystalization."

The patent was filed on May 26, 2022, under Application No. 18/562,679.

*For further information, including images, charts and tables, please visit: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-b...