US Patent Issued to Marvell Asia on Nov. 3 for "Gate all-around (GAA) field effect transistors (FETS) formed on both sides of a substrate" (California Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,442, issued on Nov. 3, was assigned to Marvell Asia Pte Ltd (Singapore).

"Gate all-around (GAA) field effect transistors (FETS) formed on both sides of a substrate" was invented by Runzi Chang (Saratoga, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electronic device includes a substrate, first and second semiconductor devices, and a power supply structure. The first semiconductor device includes a first plurality of gate all-around (GAA) field effect transistors (FETs) formed over a first side of the substrate. The second semiconductor device includes a second plurality of GAA FETs formed over a second side of the substrate, opposite the ...