US Patent Issued to MACRONIX INTERNATIONAL on Sept. 29 for "Memory device" (Taiwanese Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,751,335, issued on Sept. 29, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).

"Memory device" was invented by Shih-Hung Chen (HsinChu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a peripheral substrate and an array substrate. The peripheral substrate includes a page buffer and a high voltage processing circuits and has a peripheral substrate area. The array substrate includes an array. The array substrate and the peripheral substrate are stacked on each other, and a circuit distribution area of the high voltage processing circuit accounts for less than 10% of the peripheral substrate area."

T...