ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,725,642, issued on Sept. 1, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).

"Memory device, operation method of the same and memory system" was invented by Kuan-Chih Chen (New Taipei City, Taiwan) and Ming-Hsiu Lee (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device comprising a memory array, a voltage generator and an array control circuit is provided. The memory array is coupled to the voltage generator and comprises first and second arrays. The array control circuit is coupled to the memory array and the voltage generator, and configured to: in a programming stage, control the voltage generator to g...