US Patent Issued to MACRONIX International on Oct. 6 for "Erase method for memory device and memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., Oct. 6 -- United States Patent no. 12,755,796, issued on Oct. 6, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).

"Erase method for memory device and memory device" was invented by You-Liang Chou (Taichung City, Taiwan), Wen-Jer Tsai (Hualien County, Taiwan) and Chih-Chieh Cheng (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory erase method for a memory device and a memory device are provided. The memory device is a 3D NAND flash with high capacity and high performance. The memory erase method includes: providing a memory block, which comprises memory cell strings including first-part memory cells, dummy cells, and second-part memory cells, whe...