ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,776,376, issued on Oct. 27, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).
"Memory device and pre-charge method" was invented by Che-Ping Chen (Taipei City, Taiwan), Ya-Jui Lee (Taichung City, Taiwan) and Yu-Hung Huang (Tainan City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a memory device and a pre-charge method for a memory device. The pre-charge method includes: applying a plurality of independently-controlled pre-charge voltages to a plurality of turned-on word lines, wherein the plurality of pre-charge voltages are selected among a plurality of reference pre-charge voltages; and applying a plurality of t...