US Patent Issued to MACRONIX International on May 12 for "Memory structure with reduced read disturb" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,347, issued on May 12, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).

"Memory structure with reduced read disturb" was invented by Chi Sheng Peng (Hsinchu, Taiwan) and Ya Chun Tsai (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory structure including a memory array is provided. The memory array is a block including six sub-blocks. The memory array includes string select line portions and ground select line portions. The string select line portions are arranged along a first direction. Each of the string select line portions is located in the corresponding sub-block. The ground select line portions are a...