US Patent Issued to MACRONIX INTERNATIONAL on March 31 for "Memory device and method for manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,678, issued on March 31, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).

"Memory device and method for manufacturing the same" was invented by Chih-Hsiung Lee (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a stacked structure having an array region and a staircase region adjacent to the array region, a lower isolation structure in the stacked structure, two memory strings in the array region and at least one lower support member in the staircase region. The stacked structure includes conductive layers. The lower isolation structure has an upper surface in a lower portion of the stack...