ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,632, issued on March 3, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).
"Semiconductor device and method of forming the same" was invented by Erh-Kun Lai (Taichung City, Taiwan) and Hsiang-Lan Lung (Kaohsiung City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a stack and a plurality of vertical pillar structures disposed in the stack. The stack includes a plurality of insulating layers and a plurality of conductive layers alternately arranged, each of the conductive layers includes a center portion and a plurality of edge portions at edges of the center portion, wherein a resistance of a ma...