US Patent Issued to MACRONIX INTERNATIONAL on March 24 for "Memory device with reformed insulating layer and method of fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,206, issued on March 24, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).

"Memory device with reformed insulating layer and method of fabricating the same" was invented by Min-Feng Hung (Hsing-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a stacked structure, a channel pillar, a plurality of conductive pillars, and a slit. The stacked structure is located on a dielectric substrate, and includes a plurality of conductive layers and a plurality of insulating layers stacked alternately. The channel pillar extends through the stacked structure. The plurality of conductive pillars are located in th...