ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,497, issued on March 24, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).
"Memory device" was invented by Meng-Yen Wu (Taichung City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a substrate and first to fourth tiers. The first tier is located on the substrate and includes first transistors and second transistors. The first transistors includes multiple groups. The second tier includes a composite stack structure. The third tier includes local bit lines and local source lines. Each of the local bit lines is connected to a first terminal of one of the first transistors. Each of the local source lin...