ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,654, issued on March 17, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).
"Memory device" was invented by Chen-Yu Cheng (Hsinchu City, Taiwan), Chih-Kai Yang (Kaohsiung City, Taiwan), Shih-Chin Lee (Taichung City, Taiwan) and Tzung-Ting Han (Hsinchu City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a stack structure, a first stop layer, a dielectric layer, at least one separation wall and a conductive plug. The stacked structure is located over a substrate. The stacked structure has an opening exposing a stepped structure of the stacked structure. The first stop layer covers the stepped structure...