US Patent Issued to MACRONIX INTERNATIONAL on June 2 for "Memory device and memory system" (Taiwanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,565, issued on June 2, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).

"Memory device and memory system" was invented by Po-Hao Tseng (Taichung City, Taiwan) and Shao-Yu Fang (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory string. The memory string includes first switch elements and second switch elements. The second switch elements are arranged alternately and coupled in series with the first switch elements. When the memory string has a first conductance, each switch element of the first switch elements has a first threshold voltage level and each switch element of the sec...