ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,397, issued on July 21, was assigned to MACRONIX INTERNATIONAL Co. LTD. (Hsinchu, Taiwan).
"Vertical 3D cross point memory" was invented by Hsiang-Lan Lung (Ardsley, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Vertical 3D cross point memory has memory cells formed at cross points of vertical bit lines and horizontal word lines. The memory cells are formed of two layers, enabling higher density than conventional techniques. One of the layers optionally includes OTS (Ovonic Threshold Switch) material to enable information storage."
The patent was filed on June 9, 2023, under Application No. 18/207,839.
*For further information, including ima...